Impurity analysis of GaN gate oxide film
Successfully captured impurity diffusion from the upper side of the gate oxide film using D-SIMS!
In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.
- Company：東芝ナノアナリシス
- Price：Other
